Presenting the Best Semiconductor Materials in All Three Generations
Here at Alsil Materials, we provide you with the highest quality semiconductor materials covering all three generations, including silicon substrates, gallium arsenide, sapphire, and silicon carbide. All our silicon wafers are manufactured to SEMI standards. We also take into account the specifications of our customers during the manufacturing process and guarantee the precision of the highest industry standards.
Our services also extend to silicon wafer coating as well as coring for non-standard orientations and diameters. We offer the highest quality and ultra-pure silicon through the FZ growing process.
- CZ Grown - Diameter 2" up to 12". We provide them to customer specifications Special request materials: example, non-standard diameter, thickness, orientation
- FZ Grown - Diameter 2" up to 8". We offer resistivity up to 20,000 Ohmcm or customer exact specifications
Epitaxial Silicon Wafers
- Diameter 3" to 8"
- Epi Thickness: 0.1um to 150um
- Epi Resistivity: 0.01 to >1000 Ohmcm
- Layer Uniformity: <2% for <20um and <4% for >20um
- Surface Defects: <20 @ 0.2um LSE
- Dopant Source: Boron, Phosphorous, or Arsenic
We also supply special request of Epi silicon wafers.
LiNbO3 Crystal has unique electro-optical, piezoelectric, photoelastic, and nonlinear optical properties. ... It is an excellent material for the manufacture of optical waveguides, etc. LiNbO3 wafer is indexed as X cut, Y cut, or Z cut with trigonal structure, it also can be indexed with hexagonal structure.
- Thin Device Layer - Diameter 8" and 12" with device layer <1.5um, BOX <3um
- Thick Device Layer - Diameter 4" to 8" with device layer 2um up to >50um or to customer specification
- BOX 0.5 to 2.4um,TTV <1um
SiC Epitaxial Wafers
Diameter 4" to customer specifications
Diameter 2" to 4". We make them to customer specifications
We offer wafers of GaAs, GaN, InP, GaP, GaSb, InAs, InSb, and more
Quartz and Fused Silica
We meet customer specifications